| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,250 pcs
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10250 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The IRFPS3815PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power conversion applications requiring low on-resistance and fast switching.
Key electrical specifications include a drain-to-source voltage (Vdss) of 150V, a continuous drain current of 105A at 25°C, and a maximum drain-source on-resistance of 15mOhm at VGS=10V. The device is fully avalanche rated with a single pulse avalanche energy of 1610 mJ and an avalanche current of 58A. Switching characteristics include a typical turn-on delay time of 22 ns and a rise time of 130 ns.
The MOSFET is housed in a through-hole SUPER-247 (TO-274AA) package. It has an operating junction temperature range of -55°C to 175°C and a maximum power dissipation of 441W at 25°C case temperature. The device is lead-free and supports RoHS compliance.
The drain-to-source voltage (Vdss) is 150V.
The maximum continuous drain current is 105A at Tc=25°C with VGS=10V, and 74A at Tc=100°C.
The maximum drain-source on-resistance is 15mOhm at ID=63A and VGS=10V.
The operating junction temperature range is -55°C to 175°C.
It is available in a through-hole SUPER-247 (TO-274AA) package.
The datasheet indicates the part is lead-free, supporting RoHS3 compliance.