| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFPS3810 is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is rated for a maximum drain-source voltage of 100V and a continuous drain current of 170A at 25°C case temperature (120A at 100°C). The device features an ultra-low maximum on-resistance of 9mΩ at Vgs=10V and Id=100A, enabling high-efficiency power conversion.
This MOSFET offers a maximum power dissipation of 580W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C. It is fully avalanche rated with a single pulse avalanche energy of 1350mJ and an avalanche current rating of 100A, providing ruggedness for demanding applications. The device also features fast switching with typical turn-on delay of 24ns and rise time of 270ns.
The IRFPS3810 is packaged in a SUPER-247 (TO-274AA) through-hole package, suitable for high-power applications requiring efficient heat dissipation. The junction-to-case thermal resistance is 0.26°C/W maximum, and the case-to-sink thermal resistance is 0.24°C/W typical with a flat greased surface.
This lead-free device is designed for high-current switching applications such as power supplies, motor drives, and industrial equipment where low conduction losses and high reliability are critical.
The maximum drain-source voltage (Vds) is 100V.
The continuous drain current is 170A at Tc=25°C and 120A at Tc=100°C.
The maximum drain-source on-resistance is 9mΩ at Vgs=10V and Id=100A.
The junction operating temperature range is -55°C to 175°C.
The IRFPS3810 is available in a SUPER-247 (TO-274AA) through-hole package.
The IRFPS3810 is marked as lead-free in the datasheet, and RoHS3 compliance is indicated in the product data, though this is unverified.
The maximum power dissipation is 580W at Tc=25°C.