| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26 pcs
|
26 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present |
The Infineon Technologies IRFPG50PBF is a HEXFET Power MOSFET. This component is designed for power switching applications and features a high drain-source voltage rating of 500V and a continuous drain current of 42A.
The MOSFET has a low on-resistance of 0.05 Ohms at a gate-source voltage of 10V and a drain current of 25A, ensuring efficient power transfer. It is housed in a TO-247-4 package with a through-hole mounting type, suitable for robust power designs.
This device is lead-free, aligning with environmental standards. Its robust construction and electrical characteristics make it suitable for various industrial and power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the IRFPG50PBF is 500V.
The continuous drain current of the IRFPG50PBF is 42A.
The Rds(on) for the IRFPG50PBF is a maximum of 0.05 Ohms at VGS=10V and ID=25A.
The IRFPG50PBF is in a TO-247-4 package.
The IRFPG50PBF is a through-hole mounted component.
Yes, the IRFPG50PBF is lead-free.
