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IRFPG50PBF IRFPG50PBF is a 1000V N-Channel power MOSFET from Vishay with 6.1A continuous drain current and 2Ω on-resistance. It comes in a TO-247-3 through-hole package.
Mfr Part #:

IRFPG50PBF

Available from 2 distributors
Mfr Name: Vishay
Vishay
IRFPG50PBF is a 1000V N-Channel power MOSFET from Vishay with 6.1A continuous drain current and 2Ω on-resistance. It comes in a TO-247-3 through-hole package.
✓ Total Stock: 29,500 pcs

IRFPG50PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Risen Electronics ✓
Non-Authorised Inventory information
28,500 pcs
On Request
28500 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRFPG50PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRFPG50PBF Description

Short technical summary and product information.

The IRFPG50PBF is a third-generation N-Channel power MOSFET from Vishay, designed for high-voltage switching applications. It features a drain-source voltage rating of 1000V and a continuous drain current of 6.1A at 25°C case temperature, with a maximum on-resistance of 2Ω at 10V gate drive. The device is rated for a maximum power dissipation of 190W at 25°C case temperature.

 

This MOSFET offers fast switching, repetitive avalanche rating, and dynamic dV/dt rating, making it suitable for rugged industrial applications. The TO-247AC package provides an isolated mounting hole and greater creepage distances, which is preferred for commercial-industrial applications where higher power levels are required.

 

The device operates over a junction temperature range of -55°C to 150°C and is available in a through-hole TO-247-3 package. It is designed for ease of paralleling and simple drive requirements, making it a versatile choice for power conversion circuits.

IRFPG50PBF Quick Information

Product Type: Power MOSFET
Canonical Name: Vishay IRFPG50PBF N-Channel Power MOSFET
Subcategory: Single MOSFET

IRFPG50PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFPG50PBF Features

  • 1000V drain-source voltage rating.
  • 6.1A continuous drain current at 25°C.
  • 2Ω maximum on-resistance at 10V gate drive.
  • TO-247-3 through-hole package.
  • Repetitive avalanche rated for ruggedness.

IRFPG50PBF Applications

  • High-voltage power switching circuits.
  • Switch-mode power supplies.
  • Motor control and drive applications.
  • Industrial power conversion systems.

IRFPG50PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFPG50PBF?

The maximum drain-source voltage (Vdss) is 1000V.

What is the continuous drain current rating of the IRFPG50PBF?

The continuous drain current is 6.1A at Tc=25°C and 3.9A at Tc=100°C.

What is the on-resistance of the IRFPG50PBF?

The maximum on-resistance is 2Ω at Id=3.6A and Vgs=10V.

What is the operating temperature range of the IRFPG50PBF?

The junction temperature range is -55°C to 150°C.

What package is the IRFPG50PBF available in?

The IRFPG50PBF is available in a TO-247-3 through-hole package (also known as TO-247AC).

What is the maximum power dissipation of the IRFPG50PBF?

The maximum power dissipation is 190W at Tc=25°C.

What is the gate charge of the IRFPG50PBF?

The maximum total gate charge is 190nC at Vgs=10V, with typical Qgs of 23nC and Qgd of 110nC.

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