| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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158 pcs
|
158 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFPG50 is a 1000V N-Channel Power MOSFET designed for efficient high-voltage switching. It delivers a continuous drain current of 6.1A at 25°C and a pulsed current of 24A. The maximum drain-source on-resistance is 2 Ohm at 10V gate drive.
This device is rated for repetitive avalanche energy up to 19 mJ and a single pulse avalanche energy of 800 mJ, ensuring robust performance in demanding applications. The gate charge is 190 nC, enabling fast switching and simple drive requirements.
Packaged in a through-hole TO-247-3 (TO-247AC) case, the IRFPG50 is suitable for industrial and commercial applications requiring high reliability and thermal performance. Maximum power dissipation is 190W at case temperature 25°C, with an operating junction temperature range of -55°C to 150°C.
The drain-source voltage rating is 1000 V.
The maximum continuous drain current at case temperature 25°C is 6.1 A.
The drain-source on-resistance is a maximum of 2 Ohm at a gate-source voltage of 10 V and drain current of 3.6 A.
It comes in a through-hole TO-247-3 package, also referred to as TO-247AC.
The operating junction temperature range is -55°C to 150°C.
The maximum power dissipation at case temperature 25°C is 190 W.