| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,395 pcs
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1395 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFPG30PBF is an N-Channel power MOSFET from Vishay designed for high-voltage switching applications. It offers a drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 3.1A at 25°C case temperature. The device features a low maximum on-resistance of 5 Ohms at a gate drive of 10V, ensuring efficient power conversion.
With a gate charge of 80 nC and input capacitance of 980 pF, this MOSFET is optimized for fast switching performance. It is repetitive avalanche rated and provides dynamic dV/dt capability, making it suitable for rugged industrial environments. The isolated central mounting hole of the TO-247AC package simplifies heatsink attachment and improves thermal management.
The MOSFET can dissipate up to 125W of power at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C. Its through-hole mounting style is ideal for designs requiring robust mechanical connections. The part is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited).
The drain-source voltage (Vdss) is 1000V, as specified in the product summary.
It is supplied in a TO-247-3 package (also known as TO-247AC) with through-hole mounting.
The junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant, but this information is unverified and has low confidence.
The maximum gate threshold voltage (Vgs(th)) is 4V at a drain current of 250 µA.
The maximum drain-source on-resistance (Rds(on)) is 5 Ohms at a gate drive of 10V and drain current of 1.9A.
The MSL rating is 1 (unlimited), but this is unverified.