| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,250 pcs
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2250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFPF50PBF is an N-Channel power MOSFET from Vishay, designed for high-voltage switching applications. It features a maximum drain-source voltage of 900V and a continuous drain current of 6.7A at 25°C. The device has a low on-resistance of 1.6 Ohms at 10V gate drive, contributing to efficient power conversion.
The MOSFET is avalanche rated for ruggedness in inductive switching environments, with a single pulse avalanche energy rating of 880 mJ. It is housed in a through-hole TO-247-3 package (TO-247AC), which offers creepage distances suitable for industrial safety specifications. The device is suitable for applications such as switched-mode power supplies, motor drives, and inverters.
900 V.
6.7 A at Tc=25°C; 4.2 A at Tc=100°C.
1.6 Ohm maximum at Id=4A, Vgs=10V.
TO-247-3 (TO-247AC) through-hole package.
-55°C to 150°C (junction).
RoHS3 compliant according to database (unverified).
200 nC maximum at Vgs=10V.