| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFPF50 is an N-channel Power MOSFET from Vishay Dale designed for high-voltage switching applications. It features a maximum drain-source voltage of 900V and continuous drain current of 6.7A at 25°C case temperature. The device offers a low on-resistance of 1.6Ω (max) at Vgs = 10V and Id = 4A, with a total gate charge of 200nC for efficient switching. It includes avalanche energy ratings (single pulse 880mJ) and a repetitive avalanche current of 6.7A.
The MOSFET is housed in a TO-247-3 (TO-247AC) through-hole package, suitable for high-power commercial and industrial equipment. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 190W at 25°C. The device is RoHS3 compliant and rated for moisture sensitivity level 1 (unlimited).
Applications include switch-mode power supplies, motor drives, and high-voltage inverters where ruggedness and fast switching are required. The isolated mounting hole and ample creepage distances simplify mechanical integration and safety compliance.
900 V.
TO-247-3 (Supplier Device Package: TO-247AC).
-55°C to 150°C (junction temperature).
RoHS3 compliant (unverified).
4 V (max) at Id = 250 µA.
6.7 A (continuous), 27 A (pulsed).
1.6 Ω (max) at Vgs = 10 V, Id = 4 A.