| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFPF40 is an N-Channel enhancement-mode MOSFET designed for high-voltage switching applications. Manufactured by Vishay Dale, this device features a maximum drain-source voltage (Vdss) of 900V and a continuous drain current (Id) of 4.7A at Tc. The on-resistance (Rds(on)) is typically 2.5 Ohm at Vgs=10V and Id=2.8A, enabling efficient power handling.
This MOSFET is optimized for applications requiring high breakdown voltage and moderate current capability. The gate threshold voltage (Vgs(th)) is a maximum of 4V at Id=250µA, ensuring reliable turn-on characteristics. With a maximum gate charge (Qg) of 120 nC at Vgs=10V and input capacitance (Ciss) of 1600 pF at Vds=25V, the device offers good switching performance.
The IRFPF40 is supplied in a TO-247-3 through-hole package (supplier device package TO-247AC), suitable for PCB mounting with adequate thermal management. The maximum power dissipation is 150W at Tc, and the operating junction temperature range is -55°C to +150°C.
The maximum drain-source voltage (Vdss) is 900V.
The continuous drain current (Id) is 4.7A at Tc.
The maximum on-resistance (Rds(on)) is 2.5 Ohm at Vgs=10V and Id=2.8A.
The IRFPF40 is available in a TO-247-3 through-hole package (supplier device package TO-247AC).
The operating junction temperature range is -55°C to +150°C.
The maximum power dissipation is 150W at Tc.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.