| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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149 pcs
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149 pcs | On Request | 1 | On Request | On Request | 606 | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRFPF30PBF is a third-generation N-Channel Power MOSFET from Vishay, designed for high-voltage switching applications. It features a drain-source voltage rating of 900V and a continuous drain current of 3.6A at 25°C case temperature. The device offers a low on-resistance of 3.7 Ohms maximum at 10V gate drive, enabling efficient power conversion.
This MOSFET is avalanche-rated with a single pulse avalanche energy of 170 mJ and repetitive avalanche capability, making it suitable for rugged industrial environments. It also features dynamic dV/dt rating for improved switching performance. The gate charge is 78 nC maximum at 10V, with typical gate-source charge of 10 nC and gate-drain charge of 42 nC.
The device is housed in a TO-247AC (TO-247-3) through-hole package, which provides an isolated mounting hole and greater creepage distances for safety compliance. It operates over a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 125W at 25°C case temperature. The input capacitance is 1200 pF maximum at 25V drain-source voltage.
The maximum drain-source voltage (Vdss) is 900V.
The continuous drain current is 3.6A at 25°C case temperature and 2.3A at 100°C.
The maximum drain-source on-resistance is 3.7 Ohms at a drain current of 2.2A and gate-source voltage of 10V.
It is available in a TO-247-3 through-hole package (supplier device package TO-247AC).
The junction operating temperature range is -55°C to +150°C.
The maximum gate threshold voltage is 4V at a drain current of 250µA.
The maximum power dissipation is 125W at 25°C case temperature.