| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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23 pcs
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23 pcs | On Request | 5 | On Request | On Request | On Request | On Request | On Request |
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The IRFPE50 from Infineon Technologies is a single N-channel Power MOSFET. It is designed for high-performance applications requiring robust voltage and current handling capabilities.
Key electrical specifications include a breakdown voltage of 800V, a typical threshold voltage of 4V, and a maximum on-resistance (RDS(on)) of 1.2Ω. The device offers a continuous drain current rating of 7.8A and features typical rise and fall times of 38ns and 39ns, respectively.
With a maximum power dissipation of 190W, the IRFPE50 is suitable for demanding thermal environments, operating within a temperature range of -55°C to 150°C. The MOSFET is housed in a TO-247-3 package, designed for through-hole mounting.
This component is ideal for power switching applications where efficiency and reliability are critical. Its specifications make it a suitable choice for use in power supplies, motor control, and other high-power circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the IRFPE50 is 800V.
The maximum continuous drain current for the IRFPE50 is 7.8A.
The typical on-resistance (RDS(on)) of the IRFPE50 is 1.2Ω.
The operating temperature range for the IRFPE50 is -55°C to 150°C.
The IRFPE50 is supplied in a TO-247-3 package.
The IRFPE50 is mounted using the through-hole method.