Mfr Part #:

IRFPE50

Mfr Name: Vishay

IRFPE50 is an N-Channel Power MOSFET from Vishay Dale with 800V drain-source voltage and 7.8A continuous drain current. It comes in a TO-247-3 through-hole package.

✓ Total Stock: 689 pcs

IRFPE50 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Hybrid Electronics ✓ Non-Authorised Inventory information	675 pcs On Request	675 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Partservice ✓ Non-Authorised Inventory information	14 pcs On Request	14 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRFPE50 Description

Short technical summary and product information.

The IRFPE50 is an N-Channel Power MOSFET manufactured by Vishay Dale. It features a maximum drain-source voltage of 800V and a continuous drain current of 7.8A at 25°C case temperature. The device has a maximum on-resistance of 1.2Ω at 4.7A and 10V gate drive.

This MOSFET is designed for fast switching and includes repetitive avalanche rating and dynamic dV/dt capability. It offers a total gate charge of 200nC and input capacitance of 3100pF. The device can dissipate up to 190W at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C.

The IRFPE50 is housed in a TO-247-3 (TO-247AC) through-hole package, suitable for commercial-industrial applications requiring higher power levels. The isolated mounting hole provides greater creepage distance between pins for safety compliance.

IRFPE50 Quick Information

Product Type: Power MOSFET

Canonical Name: IRFPE50 N-Channel Power MOSFET

Subcategory: N-Channel MOSFET

IRFPE50 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IRFPE50 Features

N-Channel Power MOSFET with 800V drain-source voltage.
Continuous drain current rated at 7.8A at 25°C.
Low on-resistance of 1.2Ω at 10V gate drive.
Fast switching with 200nC total gate charge.
TO-247-3 through-hole package for high power.

IRFPE50 Applications

High-voltage switching power supplies.
Motor control and inverter circuits.
Industrial power conversion systems.
Uninterruptible power supply (UPS) designs.
Pulsed power and avalanche-rated applications.

IRFPE50 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the IRFPE50?

The maximum drain-source voltage is 800V.

What is the continuous drain current rating?

The continuous drain current is 7.8A at Tc=25°C.

What package does the IRFPE50 come in?

It comes in a TO-247-3 (TO-247AC) through-hole package.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the IRFPE50 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed from official sources.

What is the on-resistance of the IRFPE50?

The maximum on-resistance is 1.2Ω at Id=4.7A and Vgs=10V.

What is the maximum power dissipation?

The maximum power dissipation is 190W at Tc=25°C.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	7.8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC
Input Capacitance (Ciss) (Max) @ Vds	3100 pF
Mounting Type	Through Hole
Operating Temperature	-55°C / 150°C
Power Dissipation (Max)	190 W
Rds On (Max) @ Id, Vgs	1.2 Ω
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V