| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,568 pcs
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2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFPE40PBF is an N-Channel power MOSFET from Vishay Dale, designed for high-voltage switching applications. It features a maximum drain-source voltage of 800V and a continuous drain current of 5.4A at 25°C case temperature. The device offers a maximum on-resistance of 2 Ohm at a gate-source voltage of 10V and a drain current of 3.2A.
This MOSFET is built with third-generation power MOSFET technology, providing fast switching, ruggedized device design, and low on-resistance. It is housed in a TO-247AC package, which is preferred for commercial-industrial applications requiring higher power levels. The package includes an isolated mounting hole and provides greater creepage distances between pins to meet safety specifications.
Key electrical characteristics include a maximum gate threshold voltage of 4V at 250µA drain current, total gate charge of 130nC at 10V, and input capacitance of 1900pF at 25V drain-source voltage. The device can dissipate up to 150W at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C.
The maximum drain-source voltage (Vdss) is 800V.
The continuous drain current is 5.4A at a case temperature of 25°C.
The maximum on-resistance (Rds(on)) is 2 Ohm at a drain current of 3.2A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
The device is housed in a TO-247AC package.
The maximum power dissipation is 150W at a case temperature of 25°C.
The maximum gate-source voltage is ±20V.