| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17 pcs
|
17 pcs | On Request | 1 | On Request | On Request | 9536 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFPE30 is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It features a maximum drain-to-source voltage of 800V and a continuous drain current rating of 4.1A at case temperature Tc. The device offers a maximum on-resistance of 3 Ohms at a gate-source voltage of 10V and a drain current of 2.5A.
This MOSFET uses standard gate drive voltage of 10V for optimal Rds(on) performance. The maximum gate threshold voltage is 4V at 250µA drain current. Total gate charge is 78 nC at 10V, and input capacitance is 1300 pF at 25V drain-source voltage.
The device is housed in a TO-247-3 package with a TO-247AC supplier package designation, featuring through-hole mounting. Maximum power dissipation is 125W at case temperature Tc. Operating junction temperature range is -55°C to 150°C.
800V.
4.1A at case temperature Tc.
3 Ohms maximum at Vgs=10V and Id=2.5A.
TO-247-3 (supplier package TO-247AC), through-hole mounting.
-55°C to 150°C junction temperature.
125W at case temperature Tc.
4V maximum at Id=250µA.