| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,000 pcs
|
23000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFPC60LCPBF is an N-Channel Power MOSFET manufactured by Vishay Dale. It features a drain-source voltage (Vdss) of 600V and a continuous drain current of 16A at case temperature Tc. The on-resistance (Rds(on)) is typically 400 mOhm at 9.6A and 10V gate drive. The gate threshold voltage is 4V maximum at 250µA. With a maximum gate charge of 120 nC at 10V and input capacitance of 3500 pF at 25V, this device is suitable for high-frequency switching applications.
This MOSFET can dissipate up to 280W at case temperature Tc and operates over a junction temperature range of -55°C to 150°C. The maximum gate-source voltage is ±30V. The device is housed in a TO-247-3 package (supplier device package TO-247AC) and is designed for through-hole mounting, making it suitable for power conversion circuits, motor drives, and inverters.
Key specifications: N-Channel, MOSFET technology, 600V Vdss, 16A Id, 400 mOhm Rds(on) max, 120 nC gate charge, 3500 pF input capacitance, 280W power dissipation, -55°C to 150°C operating temperature.
600V.
TO-247-3 (supplier device package TO-247AC).
-55°C to 150°C (junction temperature).
The RoHS status is listed as 'RoHS3 Compliant' but is unverified.
16A at case temperature Tc.
400 mOhm maximum at 9.6A and 10V gate-source voltage.
120 nC maximum at 10V gate-source voltage.