| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,520 pcs
|
17520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,499 pcs
|
1499 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
46 pcs
|
46 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFPC50PBF is an N-Channel MOSFET manufactured by Vishay Dale. It features a maximum drain-source voltage of 600V, a continuous drain current of 11A, and a maximum on-resistance of 600mOhm at 10V gate drive. The device is housed in a TO-247-3 through-hole package and can dissipate up to 180W. It operates over a junction temperature range of -55°C to 150°C. With a gate charge of 140nC and input capacitance of 2700pF, it is suitable for high-voltage switching applications.
600V maximum.
TO-247-3 with supplier device package TO-247AC.
-55°C to 150°C junction temperature.
RoHS3 Compliant (unverified, low confidence).
11A at case temperature Tc.
Maximum 4V at Id=250µA.
600mOhm at Id=6A, Vgs=10V.