| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFPC50 is an N-Channel power MOSFET manufactured by Vishay Dale. It features a drain-source voltage rating of 600V and a continuous drain current of 11A at 25°C case temperature. The device offers a maximum drain-source on-resistance of 600mOhm at 6A drain current and 10V gate drive.
This MOSFET is designed for high-voltage switching applications. Key electrical characteristics include a gate threshold voltage of 4V maximum, a maximum gate charge of 140nC at 10V, and an input capacitance of 2700pF at 25V drain-source voltage. The recommended gate drive voltage is 10V, and the maximum gate-source voltage is ±20V.
The IRFPC50 is supplied in a TO-247-3 through-hole package (supplier device package TO-247AC). It can dissipate up to 180W at case temperature and operates over a junction temperature range of -55°C to 150°C. The component is RoHS compliant (unverified) and has an MSL rating of 1 (unlimited).
600V
11A at 25°C case temperature
600mOhm at 6A drain current and 10V gate drive
TO-247-3 through-hole package (supplier device package TO-247AC)
-55°C to 150°C (junction temperature)
4V maximum at 250µA drain current
Yes, RoHS3 compliant (unverified)