| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | 2021+ | On Request | On Request | |
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7,770 pcs
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7770 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP9240PBF is a P-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It features a drain-to-source voltage rating of 200V and a continuous drain current of 12A at case temperature. The device has a maximum on-resistance of 500mOhm at a gate drive of 10V and a drain current of 7.2A.
This MOSFET uses Metal Oxide semiconductor technology and is designed for through-hole mounting in a TO-247-3 package, with the supplier device package designated as TO-247AC. It can dissipate up to 150W of power at the case and operates over a junction temperature range of -55°C to 150°C.
The device has a maximum gate threshold voltage of 4V at 250µA drain current and can accept a gate-to-source voltage of up to ±20V. Input capacitance is rated at 1200pF at 25V drain-source voltage, and maximum gate charge is 44nC at 10V gate voltage.
The drain-to-source voltage (Vdss) is 200V.
The maximum drain current is 12A at case temperature (Tc).
The maximum drain-to-source on-resistance (Rds(on)) is 500mOhm at Id=7.2A and Vgs=10V.
It comes in a TO-247-3 through-hole package, with the supplier device package designated as TO-247AC.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.
The maximum power dissipation is 150W at case temperature (Tc).