| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,320 pcs
|
12320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP9140PBF is a P-Channel Power MOSFET manufactured by Vishay Dale, designed for high-power switching applications. It offers a maximum drain-to-source voltage of 100V and a continuous drain current of 21A at 25°C case temperature, with a maximum on-resistance of 200mΩ at 13A and 10V gate drive.
This device features fast switching performance, repetitive avalanche rating, and a dynamic dV/dt rating for rugged operation. The gate charge is 61nC maximum at 10V, with input capacitance of 1400pF at 25V drain-source voltage. It is rated for a maximum power dissipation of 180W at 25°C case temperature.
The IRFP9140PBF is housed in a through-hole TO-247-3 package (TO-247AC), suitable for commercial and industrial applications requiring higher power levels. The operating junction temperature range is -55°C to 175°C.
The maximum drain-source voltage (Vdss) is 100V.
The continuous drain current is 21A at Tc=25°C and 15A at Tc=100°C.
The maximum on-resistance (Rds on) is 200mΩ at Id=13A and Vgs=10V.
The IRFP9140PBF is available in a through-hole TO-247-3 package (TO-247AC).
The operating junction temperature range is -55°C to 175°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.
The maximum gate charge (Qg) is 61nC at Vgs=10V.