| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,425 pcs
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4425 pcs | On Request | 1 | On Request | On Request | 0342+ | On Request | On Request | |
|
34 pcs
|
34 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP9140 is a P-Channel enhancement-mode Power MOSFET designed for high-power switching applications. It delivers a drain-source voltage (Vds) of 100V and a continuous drain current of 21A at 25°C case temperature. The device features a low maximum on-resistance of 200mΩ measured at Vgs = -10V and Id = 13A, enabling efficient power conversion.
The MOSFET offers a total gate charge of 61nC at 10V gate drive, with typical gate-source charge of 14nC and gate-drain charge of 29nC. Input capacitance is 1400pF at 25V drain-source bias. The device is avalanche-rated with a single-pulse avalanche energy of 960mJ and repetitive avalanche current capability of 21A.
Packaged in the industry-standard TO-247-3 (TO-247AC) through-hole package, the IRFP9140 provides excellent thermal performance with a maximum power dissipation of 180W at 25°C case temperature. It operates over a junction temperature range of -55°C to 175°C, making it suitable for demanding environments. The part is RoHS3 compliant and MSL Level 1 (unlimited).
The maximum drain-source voltage (Vdss) is 100V.
It comes in a TO-247-3 (TO-247AC) through-hole package.
The operating junction temperature range is -55°C to 175°C.
The datasheet indicates RoHS3 compliant, but this is unverified and low confidence.
The maximum on-resistance is 200mΩ at Id = 13A and Vgs = -10V.
The maximum gate threshold voltage is 4V at Id = 250µA.
The continuous drain current is 21A at Tc = 25°C.