BC847BS.115
NXP Semiconductors
The BC847BS.115 is a bipolar transistor array from NXP Semiconductors. It features RoHS3 compliance and an MSL of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,870 pcs
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2870 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Industrial Grade | |
| SVHC Present |
The IRFP90N20DPBF from Vishay Dale is a power MOSFET suitable for high frequency DC-DC converter applications. It features a maximum continuous drain current of 94A at 25°C and 66A at 100°C, with a pulsed drain current of up to 380A.
Key electrical characteristics include a drain-to-source breakdown voltage of 200V and a low static drain-to-source on-resistance of 0.023 Ohms at a gate-to-source voltage of 10V and a drain current of 56A. The gate threshold voltage ranges from 3V to 5V. Dynamic characteristics include a total gate charge of 180nC typical, with input capacitance (Ciss) at 6040pF, output capacitance (Coss) at 1070pF, and reverse transfer capacitance (Crss) at 170pF.
This MOSFET is housed in a TO-247AC package, designed for through-hole mounting. It has a maximum power dissipation of 580W at 25°C and a junction-to-case thermal resistance of 0.26°C/W. The operating and storage temperature range is -55°C to +175°C. The part is supplied in tubes with a standard pack quantity of 25 units.
The maximum continuous drain current is 94A at 25°C and 66A at 100°C.
The drain-to-source breakdown voltage is 200V.
The typical static drain-to-source on-resistance is 0.023 Ohms.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFP90N20DPBF is in a TO-247AC package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.