| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IRFP90N20DPBF is an N-Channel MOSFET designed for high-frequency DC-DC converters. It features a maximum drain-to-source breakdown voltage of 200V and a low static drain-to-source on-resistance of 0.023Ω at a gate-to-source voltage of 10V and a drain current of 56A.
This MOSFET offers a continuous drain current of 94A at 25°C case temperature and 66A at 100°C case temperature. Key electrical characteristics include a total gate charge of 180nC typical, and dynamic parameters such as turn-on delay time of 23ns and fall time of 79ns.
The device is housed in a TO-247AC package, suitable for through-hole mounting. It operates across a wide temperature range from -55°C to +175°C. The low gate-to-drain charge is beneficial for reducing switching losses in applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source breakdown voltage is 200V.
The typical static drain-to-source on-resistance is 0.023Ω.
The continuous drain current at 25°C case temperature is 94A.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFP90N20DPBF is supplied in a TO-247AC package.
The standard package quantity is 25 units.