| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
IRFP7537PBF is an N-channel power MOSFET from Infineon Technologies in a TO-247-3 through-hole package. It has a 60V drain-to-source breakdown voltage and supports 172A continuous drain current at Tc=25°C and 121A at Tc=100°C, with 700A pulsed drain current capability. Maximum power dissipation is 230W at Tc=25°C.
Key electrical characteristics include 2.75mΩ typical on-resistance at VGS=10V and ID=100A, gate threshold voltage from 2.1V to 3.7V, maximum gate charge of 210nC at VGS=10V, and input capacitance of 7020pF at VDS=25V. The part is rated for single-pulse avalanche energy of 250mJ and has junction-to-case thermal resistance of 0.66°C/W.
Intended applications from the datasheet include brushed and BLDC motor drives, half-bridge and full-bridge topologies, synchronous rectifiers, resonant mode power supplies, DC/DC and AC/DC converters, and DC/AC inverters. The standard package quantity is 25 pieces per tube. The datasheet identifies the device as lead-free and RoHS compliant.
The drain-to-source voltage (Vdss) rating is 60V.
The device is available in a TO-247-3 through-hole package, listed as TO-247AC in the datasheet.
The junction temperature range is -55°C to 175°C.
The datasheet describes the device as lead-free and RoHS compliant, but this status has not been independently verified from an external certificate.
The maximum continuous drain current is 172A at case temperature 25°C and 121A at 100°C.
At VGS=10V and ID=100A, RDS(on) is 2.75mΩ typical and 3.30mΩ maximum. At VGS=6V and ID=50A, it is 3.50mΩ typical.
The maximum total gate charge is 210nC at VGS=10V.