| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | 2021+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP7430PBF is an N-Channel MOSFET from Infineon Technologies, part of the StrongIRFET family. It is rated for a drain-to-source voltage (Vdss) of 40V and a continuous drain current of 195A when package-limited (wire bond) or 404A when silicon-limited at Tc=25°C. The on-resistance (Rds(on)) is typically 1.0mOhm and a maximum of 1.3mOhm at 10V gate drive. The device can handle a pulsed drain current of 1524A and has a maximum power dissipation of 366W at Tc=25°C.
Key electrical characteristics include a gate charge of 460nC maximum, input capacitance of 14240pF, and a gate threshold voltage maximum of 3.9V. The operating junction temperature range is -55°C to 175°C. The device also features a single pulse avalanche energy rating of 722mJ (L=0.14mH) and 1405mJ (L=1.0mH).
The IRFP7430PBF is supplied in a TO-247-3 (TO-247AC) through-hole package. Standard pack quantity is 25 pieces per tube. It is RoHS compliant, halogen-free, and lead-free. Applications include brushed and BLDC motor drives, battery powered circuits, synchronous rectifier topologies, and DC/DC or AC/DC converters.
The drain-to-source voltage (Vdss) is 40V.
The package is TO-247-3 (TO-247AC).
The operating junction temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant and halogen-free.
The package-limited continuous drain current is 195A at Tc=25°C; the silicon-limited current is 404A at Tc=25°C.
The maximum gate threshold voltage is 3.9V at Id=250µA.
The typical on-resistance is 1.0mOhm at Id=100A, Vgs=10V.