| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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218 pcs
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218 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation |
The Infineon IRFP4868 is a Silicon N-Channel Power MOSFET housed in a TO-247 package. This device is rated for a maximum drain-source breakdown voltage (BVDSS) of 300V and can handle a continuous drain current (ID) of up to 70A under specific conditions. The on-resistance (RDS(ON)) is specified at a maximum of 0.032 ohms at VGS = 10V and TA = 25°C.
With a maximum power dissipation (PD) of 517W, this MOSFET is suitable for demanding power applications. It features a thermal resistance junction-to-case (RthJC) of 0.29°C/W, facilitating efficient heat management when properly mounted. The gate charge characteristics include typical values for QGS (60nC), QGD (57nC), and total gate charge QG (180nC).
The TO-247 package is a through-hole type, designed for robust mounting and thermal performance, often featuring a thermal pad on the bottom. This configuration is common in power electronics where efficient heat dissipation is critical for reliability and performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage (BVDSS) for the IRFP4868 is 300V.
The maximum on-resistance (RDS(ON)) of the IRFP4868 is 0.032 ohms at VGS = 10V and TA = 25°C.
The continuous drain current (ID) rating for the IRFP4868 is 70A at TA = 25°C.
The IRFP4868 MOSFET is supplied in a TO-247 package with through-hole mounting.
The typical total gate charge (QG Total) for the IRFP4868 is 180nC.