Mfr Part #:

IRFP4768PBF

Mfr Name: Infineon

The Infineon IRFP4768PBF is an N-channel MOSFET designed for high-efficiency power switching applications. It features a 250V breakdown voltage and a continuous drain current of 93A.

✓ Total Stock: 12,502 pcs

$ Price Range: $0.71

IRFP4768PBF Available from 5 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,342 pcs On Request	4342 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	4,070 pcs On Request	4070 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,790 pcs On Request	1790 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	1,300 pcs On Request	1300 pcs	On Request	1	On Request	On Request	2021+	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRFP4768PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Input Capacitance	10880pF
Quantity	25

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IRFP4768PBF Description

Short technical summary and product information.

The Infineon IRFP4768PBF is a high-performance N-channel MOSFET suitable for applications requiring efficient power switching. It boasts a drain-source breakdown voltage of 250V and a continuous drain current of 93A at 25°C.

Key electrical characteristics include a low static drain-to-source on-resistance of 14.5mΩ typical at 10V gate-to-source voltage and 56A drain current. The device also features a gate threshold voltage ranging from 3.0V to 5.0V. Dynamic characteristics such as total gate charge (Qg) are 180nC typical, with a turn-on delay time of 36ns and a fall time of 110ns.

Designed for ruggedness, it offers improved gate, avalanche, and dynamic dV/dt capabilities. The MOSFET is characterized by its capacitance and avalanche SOA. It operates within a junction and storage temperature range of -55°C to +175°C.

The IRFP4768PBF comes in a TO-247AC package, suitable for through-hole mounting. It is supplied in tubes of 25 units and is RoHS compliant.

IRFP4768PBF Quick Information

Product Type: N-channel MOSFET

Canonical Name: Infineon IRFP4768PBF N-channel MOSFET

Subcategory: N-Channel

IRFP4768PBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead-Free

IRFP4768PBF Estimated Pricing

Qty	Low	High
1+	$0.71	$0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFP4768PBF Features

250V drain-to-source breakdown voltage.
93A continuous drain current at 25°C.
Low 14.5mΩ typical on-resistance.
Fast switching times for efficiency.
TO-247AC package for through-hole mounting.

IRFP4768PBF Applications

High efficiency synchronous rectification.
Uninterruptible power supply systems.
High speed power switching circuits.
Hard switched and high frequency circuits.

IRFP4768PBF FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage of the IRFP4768PBF?

The maximum drain-to-source voltage (V(BR)DSS) is 250V.

What package type does the IRFP4768PBF come in?

The package type is TO-247AC.

What is the typical RDS(on) value for this MOSFET?

The typical RDS(on) is 14.5mΩ at VGS = 10V.

What is the operating temperature range for the IRFP4768PBF?

-55°C to +175°C.

Is the IRFP4768PBF RoHS compliant?

Yes, it is RoHS3 compliant.

What is the maximum power dissipation at 25°C?

The maximum power dissipation is 520W.