| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP4710PBF is a 100V, 72A N-Channel power MOSFET from Infineon Technologies. It utilizes HEXFET technology and is designed for high-efficiency power switching applications. Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 100V, a continuous drain current of 72A at 25°C, and a low on-resistance of 14mΩ maximum at 45A gate drive of 10V. The device has a total gate charge of 170nC and an input capacitance of 6160pF, enabling efficient switching in high-frequency circuits. The MOSFET is housed in a through-hole TO-247-3 package (supplier device package TO-247AC) which offers excellent thermal performance. Maximum power dissipation is 190W at 25°C case temperature, and the device can operate over a junction temperature range of -55°C to 175°C. Typical applications include high-frequency DC-DC converters, motor control systems, and uninterruptible power supplies (UPS). The device is also suitable for other power switching and regulation applications requiring high voltage and current handling.
The drain-to-source voltage (Vdss) is 100V.
The maximum continuous drain current is 72A at 25°C case temperature.
The maximum on-resistance is 14mΩ at Id=45A, Vgs=10V.
It is available in a through-hole TO-247-3 package, also known as TO-247AC.
The operating junction temperature range is -55°C to 175°C.
Yes, it is reported as RoHS3 compliant, but this is unverified.
The maximum gate threshold voltage is 5.5V at Id=250µA.