| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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11,420 pcs
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11420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFP4668PBFXKMA1 is a 200V N-channel power MOSFET from Infineon Technologies, designed for high efficiency applications. It features a low typical on-resistance of 8.0mΩ (max 9.7mΩ) at VGS=10V, enabling reduced conduction losses. With a continuous drain current rating of 130A at 25°C and 92A at 100°C, it handles high power levels. The device is capable of 520W power dissipation and operates over a junction temperature range of -55°C to 175°C.
Key electrical characteristics include a total gate charge of 161nC typical and input capacitance of 10720pF, making it suitable for high-speed switching. The device is avalanche rated at 760mJ and offers enhanced body diode dV/dt and dI/dt capability. It is optimized for hard switched and high frequency circuits.
The MOSFET is packaged in a standard TO-247AC (TO-247-3) through-hole package, supplied in tubes of 25 pieces. The part is lead-free and RoHS compliant per the datasheet, though compliance is unverified. Typical applications include synchronous rectification in SMPS, uninterruptible power supplies, and high speed power switching.
200V
130A at TC=25°C, 92A at TC=100°C
8.0mΩ at VGS=10V, ID=81A
175°C
TO-247AC (TO-247-3)
Yes, RoHS3 compliant (unverified)
161 nC typical at VGS=10V