Mfr Part #:

IRFP4668PBF

Mfr Name: Infineon

The Infineon IRFP4668PBF is an N-channel MOSFET with a 200V drain-source breakdown voltage and a continuous drain current of 130A. It features a low on-resistance of 8.0mΩ typical.

✓ Total Stock: 4,091 pcs

$ Price Range: $0.99

IRFP4668PBF Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,646 pcs On Request	1646 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	1,045 pcs On Request	1045 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	400 pcs On Request	400 pcs	On Request	1	On Request	On Request	21+	On Request	On Request

IRFP4668PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Halogen Free	No
Input Capacitance	10720pF
SVHC Present	Not Present

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IRFP4668PBF Description

Short technical summary and product information.

The Infineon IRFP4668PBF is an N-channel power MOSFET designed for high-efficiency applications such as synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits.

Key electrical characteristics include a drain-source breakdown voltage (VDS) of 200V and a continuous drain current (ID) of 130A at 25°C. The static drain-to-source on-resistance (RDS(on)) is typically 8.0mΩ at 81A and 10V gate-to-source voltage. It offers improved gate, avalanche, and dynamic dV/dt ruggedness.

This MOSFET is housed in a TO-247AC package, suitable for through-hole mounting. The operating junction and storage temperature range is -55°C to +175°C. Its thermal resistance from junction to case is 0.29°C/W.

Applications benefit from its enhanced body diode dV/dt and dI/dt capability, fully characterized capacitance, and avalanche SOA. The part number IRFP4668PBF indicates lead-free processing.

IRFP4668PBF Quick Information

Product Type: MOSFET

Series: IRFP

Canonical Name: IRFP4668PBF N-channel MOSFET

Subcategory: N-Channel

IRFP4668PBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IRFP4668PBF Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFP4668PBF Features

200V drain-source breakdown voltage.
130A continuous drain current.
8.0mΩ typical static drain-to-source on-resistance.
TO-247AC package for through-hole mounting.
Suitable for high-speed power switching.

IRFP4668PBF Applications

High efficiency synchronous rectification.
Uninterruptible power supply circuits.
High speed power switching applications.
Hard switched high frequency circuits.

IRFP4668PBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 200V.

What is the typical static drain-to-source on-resistance?

The typical static drain-to-source on-resistance is 8.0mΩ at 81A and 10V.

What is the continuous drain current?

The continuous drain current is 130A at 25°C and 92A at 100°C.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to +175°C.

What package type is the IRFP4668PBF?

The IRFP4668PBF comes in a TO-247AC package.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.