IRFP4668PBF N-Channel power MOSFET from Infineon Technologies, rated at 200V drain-source voltage and 130A continuous drain current. Features low on-resistance of 9.7mΩ and TO-247-3 through-hole package.
Mfr Part #:

IRFP4668PBF

Available from 3 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET from Infineon Technologies, rated at 200V drain-source voltage and 130A continuous drain current. Features low on-resistance of 9.7mΩ and TO-247-3 through-hole package.
✓ Total Stock: 150 pcs
$ Price Range: $1.20

IRFP4668PBF Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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100 pcs
100 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
46 pcs
46 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request
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4 pcs
4 pcs On Request 1 On Request On Request On Request On Request On Request

IRFP4668PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFP4668PBF Description

Short technical summary and product information.

The IRFP4668PBF is an N-Channel power MOSFET from Infineon Technologies designed for high-efficiency power conversion. It is rated for a drain-source voltage of 200V and a continuous drain current of 130A at Tc=25°C (92A at Tc=100°C). The device features a low typical on-resistance of 8.0mΩ (maximum 9.7mΩ at Vgs=10V) and a maximum power dissipation of 520W.

 

With a typical gate charge of 161nC and fast switching times (turn-on delay 41ns, rise time 105ns, turn-off delay 64ns, fall time 74ns), this MOSFET is suitable for high-frequency and hard-switched applications. It also offers 760mJ avalanche energy capability and enhanced body diode ruggedness.

 

The device is housed in a TO-247-3 (TO-247AC) through-hole package, providing excellent thermal performance with a junction-to-case thermal resistance of 0.29°C/W. It is lead-free and RoHS compliant. Typical applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits.

IRFP4668PBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRFP4668PBF - N-Channel MOSFET, 200V, 130A, TO-247-3
Subcategory: Single MOSFET

IRFP4668PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFP4668PBF Estimated Pricing

Qty Low High
1+ $1.20 $1.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFP4668PBF Features

  • 200V drain-source voltage rating.
  • 130A continuous drain current.
  • Low on-resistance of 9.7mΩ.
  • High power dissipation of 520W.
  • Fast switching with low gate charge.

IRFP4668PBF Applications

  • High efficiency synchronous rectification in SMPS.
  • Uninterruptible power supply systems.
  • High speed power switching circuits.
  • Hard switched and high frequency circuits.

IRFP4668PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFP4668PBF?

200V.

What is the continuous drain current rating?

130A at Tc=25°C, 92A at Tc=100°C.

What is the on-resistance of this MOSFET?

Typical 8.0mΩ, maximum 9.7mΩ at Vgs=10V, Id=81A.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What package does the IRFP4668PBF come in?

TO-247-3 (TO-247AC) through-hole package.

Is the IRFP4668PBF RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the total gate charge?

Typical 161nC, maximum 241nC at Vgs=10V.

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