| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,195 pcs
|
1195 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
862 pcs
|
862 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP460LCPBF is an N-Channel Power MOSFET from Vishay Siliconix, designed for high-voltage switching applications. It features a drain-source voltage rating of 500V and a continuous drain current of 20A at Tc=25°C (12A at Tc=100°C). The device offers a maximum on-resistance of 270mΩ at Vgs=10V and Id=12A, enabling efficient power conversion.
With a low gate charge of 120nC maximum at Vgs=10V, the IRFP460LCPBF reduces gate drive requirements and enables faster switching speeds. Input capacitance is 3600pF at Vds=25V, and the device is rated for repetitive avalanche energy up to 28mJ. The MOSFET can dissipate up to 280W at Tc=25°C and operates over a junction temperature range of -55°C to 150°C.
The part is supplied in a through-hole TO-247-3 package (supplier device package TO-247AC), which features an isolated mounting hole for easy heat sinking. It is suitable for commercial-industrial applications where higher power levels are required. The IRFP460LCPBF is RoHS compliant with PbF terminations.
TO-247-3 through-hole package with supplier device package TO-247AC.
-55°C to 150°C (junction temperature).
Yes, RoHS3 compliant according to existing data.
500V.
20A at Tc=25°C, 12A at Tc=100°C.
270mOhm maximum at Vgs=10V, Id=12A.
120nC maximum at Vgs=10V.