| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
423 pcs
|
423 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type |
The IRFP460 is an N-channel power MOSFET manufactured by Vishay, designed to provide a balance of low on-resistance and fast switching capabilities. This high-voltage device features a drain-source breakdown voltage of 500V and a continuous drain current of 20A, making it suitable for applications involving mains voltage input, such as switching converters, high voltage amplifiers, and motor drivers.
Key electrical characteristics include an input capacitance of 4.2nF and a gate threshold voltage ranging from 2V to 4V. To achieve its specified on-resistance of 0.27Ω, a gate voltage of at least 10V is required. The maximum gate voltage limit is ±20V to prevent damage.
This MOSFET comes in a TO-247 package, typically used in through-hole mounting configurations. Its design makes it well-suited for low-side switching applications. Equivalent MOSFETs include the IRF3205, IRF250, and IRF840.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage of the IRFP460 is 500V.
The IRFP460 supports a continuous drain current of 20A.
The IRFP460 is packaged in a TO-247 package.
The input capacitance of the IRFP460 is 4.2nF.
The gate threshold voltage ranges from 2V to 4V.
The maximum gate voltage is ±20V.