| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFP4568PBFXKMA1 is a 150V N-Channel MOSFET from Infineon Technologies, designed for high efficiency power conversion. It delivers a continuous drain current of 171A at 25°C (121A at 100°C) and a pulsed drain current of 684A. The typical on-resistance is 4.8mOhm with a maximum of 5.9mOhm at Vgs=10V, enabling low conduction losses.
This MOSFET features enhanced gate, avalanche, and dynamic dV/dt ruggedness, making it suitable for hard-switched and high-frequency circuits. The gate charge is 151nC typical (227nC max), and input capacitance is 10470pF typical. It is avalanche-rated with a single pulse energy of 763mJ.
The device is housed in a TO-247-3 (TO-247AC) through-hole package with a standard pack quantity of 25 tubes. It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 517W at 25°C case temperature.
Typical applications include high efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, high speed power switching, and hard switched circuits.
The minimum drain-source breakdown voltage is 150V.
The continuous drain current is 171A at Tc=25°C with Vgs=10V.
The typical on-resistance is 4.8mOhm and maximum is 5.9mOhm at Vgs=10V, Id=103A.
It is available in a TO-247-3 (TO-247AC) through-hole package.
The junction temperature range is -55°C to 175°C.
The RoHS status is listed as RoHS3 Compliant but is unverified; treat as low confidence.
Maximum power dissipation is 517W at Tc=25°C.