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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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40,000 pcs
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40000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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15,945 pcs
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15945 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,539 pcs
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3539 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Drain Current (ID) (Maximum @ TC=100 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-Drain Charge (Qgd) | |
| Gate-Source Charge (Qgs) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Isolated Mounting Hole | |
| Lead Style | |
| Mounting Torque | |
| Mounting Type | |
| Operating Temperature | |
| Peak Diode Recovery dv/dt | |
| Power Dissipation (Max) | |
| Pulsed Drain Current (Idm) | |
| Rds On (Max) @ Id, Vgs | |
| Repetitive Avalanche Current (IAR) | |
| Repetitive Avalanche Energy (EAR) | |
| Single Pulse Avalanche Energy (EAS) | |
| Soldering Temperature (Peak) | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Thermal Resistance Junction to Ambient (RthJA) | |
| Thermal Resistance, Case-to-Sink (RthCS) | |
| Thermal Resistance, Junction to Case (RthJC) | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP450PBF is an N-Channel Power MOSFET from Vishay Dale, designed for high-voltage switching applications. It features a maximum drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 14A at 25°C case temperature, with a pulsed drain current capability of 56A. The on-resistance (Rds(on)) is typically 400mOhm at Vgs=10V and Id=8.4A, enabling efficient power conversion.
This MOSFET is housed in a TO-247-3 through-hole package, which provides excellent thermal performance with a junction-to-case thermal resistance of 0.65°C/W and a maximum power dissipation of 190W. It offers fast switching characteristics with a total gate charge of 150nC, and is rated for single-pulse avalanche energy up to 760mJ, making it suitable for rugged industrial environments.
Typical applications include switch-mode power supplies, DC-DC converters, motor control, and high-voltage switching circuits. The isolated mounting hole simplifies heatsink attachment, and the device is suitable for commercial-industrial power levels where higher current than TO-220 packages is required.
The maximum drain-source voltage (Vds) is 500V.
At case temperature 25°C, the continuous drain current is 14A. At 100°C, it derates to 8.7A.
It is offered in a TO-247-3 through-hole package (supplier device package TO-247AC).
The operating junction temperature range is -55°C to 150°C.
The part number suffix PBF indicates lead-free, and the database lists it as RoHS3 Compliant, but this is unverified. Please confirm with the manufacturer.
The maximum drain-source on-resistance is 400mOhm at Vgs=10V and Id=8.4A.
The maximum gate threshold voltage is 4V at Id=250µA.