| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFP450 is an N-Channel Power MOSFET from STMicroelectronics' PowerMesh II series. It is rated for a maximum drain-source voltage of 500V and a continuous drain current of 14A at 25°C case temperature (8.7A at 100°C). The device features a low maximum on-resistance of 380mΩ (typical 310mΩ) at Vgs=10V and Id=7A, making it suitable for high-efficiency switching applications.
Electrical characteristics include a maximum gate threshold voltage of 4V, typical input capacitance of 2000pF, and a maximum gate charge of 90nC at Vgs=10V. The MOSFET is avalanche-rated with a single pulse avalanche energy of 800mJ and an avalanche current capability of 14A. It also offers a high peak diode recovery dv/dt of 3.5V/ns.
The device is housed in a through-hole TO-247-3 package with a junction-to-case thermal resistance of 0.66°C/W and a maximum power dissipation of 190W at 25°C. Typical applications include switch mode power supplies, high current high speed switching, DC-AC converters for welding equipment, and uninterruptible power supplies.
500V maximum.
TO-247-3 through-hole package.
150°C.
RoHS3 compliant (unverified).
380mΩ at Vgs=10V, Id=7A.
90nC maximum at Vgs=10V.
800mJ single pulse.