| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14 pcs
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14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFP4468PBF is a 100V N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for high efficiency power conversion applications. Key specifications include a drain-source voltage (Vdss) of 100V, a typical on-resistance (Rds(on)) of 2.0mΩ with a maximum of 2.6mΩ, and a continuous drain current of 195A (package limited) or 290A (silicon limited). The device is capable of handling pulsed drain currents and has a maximum power dissipation of 1120W at a case temperature of 25°C.
The MOSFET is housed in a TO-247AC through-hole package, which provides good thermal performance. It features enhanced body diode dV/dt and dI/dt capability, fully characterized capacitance, and improved avalanche ruggedness. These characteristics make it suitable for high-speed switching and hard-switched circuits.
Typical applications include high efficiency synchronous rectification in switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and high-speed power switching. The device is lead-free (Pb-free) and compatible with RoHS requirements.
The drain-source voltage (Vdss) is 100V.
The junction operating temperature range is -55°C to +175°C.
The IRFP4468PBF is available in a TO-247AC package.
The continuous drain current is 195A (package limited) or 290A (silicon limited) at 25°C case temperature.