| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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32 pcs
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32 pcs | On Request | 1 | On Request | On Request | 1051 | On Request | On Request |
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The IRFP4368PBF is an N-Channel power MOSFET from Infineon Technologies designed for high-efficiency power switching applications. It features a drain-to-source breakdown voltage of 75V and a continuous drain current of 195A (package limited) or 350A (silicon limited) at 25°C. The device offers a typical on-resistance of 1.46 mOhm at Vgs=10V, enabling low conduction losses.
This MOSFET is housed in a TO-247AC through-hole package and supports a maximum power dissipation of 520W at 25°C case temperature. It operates over a junction temperature range of -55°C to 175°C. The device is lead-free and RoHS3 compliant.
Typical applications include high-efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, and high-speed power switching circuits. The part is supplied in tube packaging with 25 pieces per tube.
The drain-to-source breakdown voltage (Vdss) is 75 V minimum.
The continuous drain current is 195 A (package limited) and 350 A (silicon limited) at Tc=25°C with Vgs=10V.
The typical drain-to-source on-resistance is 1.46 mOhm, with a maximum of 1.85 mOhm at Vgs=10V and Id=195A.
It is available in a TO-247-3 (TO-247AC) through-hole package.
The operating junction temperature range is -55°C to 175°C.
Yes, it is marked as RoHS3 compliant and lead-free.