MF0204FTE52-1K
Yageo
The Yageo MF0204FTE52-1K is a 1kΩ metal film fixed resistor. It offers a 0.4W power rating and a ±1% tolerance.
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6,734 pcs
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6734 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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6,349 pcs
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6349 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
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1,149 pcs
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1149 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRFP4332PBF is an N-channel HEXFET Power MOSFET specifically engineered for applications such as sustain, energy recovery, and pass switches in Plasma Display Panels (PDPs). It utilizes advanced process technology to achieve low on-resistance per silicon area and a low EPULSE rating, which helps reduce power dissipation.
Key electrical characteristics include a 250V drain-to-source breakdown voltage and a continuous drain current of 57A at 25°C. The static drain-to-source on-resistance is typically 29mΩ at 10V gate-to-source voltage and 35A drain current. It also features a gate threshold voltage of 3V and a total gate charge of 99nC.
This MOSFET operates reliably at junction temperatures up to 175°C, offering improved ruggedness. The TO-247AC package is suitable for through-hole mounting. Its design prioritizes fast switching times, high repetitive peak current capability, and robust repetitive avalanche capability, making it an efficient and reliable component for PDP driving applications.
| Qty | Low | High |
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| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-to-source breakdown voltage is 250V.
The continuous drain current at 25°C is 57A.
The typical static drain-to-source on-resistance is 29mΩ.
The operating junction temperature range is -40°C to +175°C.
The IRFP4332PBF is supplied in a TO-247AC package.
The standard pack quantity is 25 units.
