| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,170 pcs
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1170 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFP4332PBF is a 250V, 57A N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET product family. It is designed for high-performance power switching applications, particularly for Plasma Display Panel (PDP) sustain, energy recovery, and pass switch circuits.
Key electrical specifications include a maximum drain-source on-resistance of 33mOhm at 10V gate drive, a maximum gate threshold voltage of 5V, and a total gate charge of 150nC. The device is rated for a maximum power dissipation of 360W at a case temperature of 25°C and can operate at a junction temperature range of -40°C to +175°C.
The IRFP4332PBF is housed in a through-hole TO-247AC package (TO-247-3) and is RoHS3 compliant. It offers high repetitive peak current capability and low gate charge for fast switching performance.
The minimum drain-source breakdown voltage is 250V.
The maximum continuous drain current is 57A at a case temperature of 25°C and 40A at 100°C.
The maximum on-resistance is 33mOhm at a drain current of 35A and gate voltage of 10V.
The operating junction temperature range is -40°C to +175°C.
It comes in a through-hole TO-247-3 package, also known as TO-247AC.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified.