| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Channels | |
| Industrial Grade | |
| Input Capacitance | |
| Medical Grade | |
| Military Grade | |
| Operating Temperature | |
| Storage Temperature | |
| Tape & Reel |
The Infineon Technologies IRFP4242PBF is a HEXFET Power MOSFET specifically engineered for applications such as sustain, energy recovery, and pass switching in Plasma Display Panels. This component utilizes advanced processing techniques to achieve a low on-resistance per silicon area and a low EPULSE rating.
Key electrical specifications include a breakdown voltage of 300V, a threshold voltage of 5V, and a maximum on-resistance (RDS(on) Max) of 59mΩ. It has an input capacitance of 7.37nF and can handle a maximum power dissipation of 430W. The MOSFET operates with a dual supply voltage of up to 360V.
Designed for demanding thermal environments, the IRFP4242PBF has a minimum operating temperature of -40°C and a maximum operating temperature of 175°C. It is housed in a TO-247-3 package and is designed for through-hole mounting.
This MOSFET is suitable for applications requiring high performance and reliability in power switching scenarios.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 300V.
The maximum on-resistance is 59mΩ.
The operating temperature range is from -40°C to 175°C.
It comes in a TO-247-3 package.
It is designed for through-hole mounting.