IRFP4229PBF

The Infineon IRFP4229PBF is an N-channel HEXFET Power MOSFET specifically engineered for sustain, energy recovery, and pass switch applications in Plasma Display Panels (PDPs). It utilizes advanced processing techniques to achieve low on-resistance per silicon area and a low E PULSE rating, contributing to reduced power dissipation in PDP driving applications.

Key electrical specifications include a maximum drain-to-source voltage of 250V and a typical static drain-to-source on-resistance of 38mΩ at 10V gate-to-source voltage. The device operates with a gate threshold voltage typically around 3V. It offers a continuous drain current of 44A at 25°C case temperature and 31A at 100°C case temperature, with a pulsed drain current capability of up to 180A.

This MOSFET is built for robustness and reliability, featuring a high repetitive peak current capability of 87A at 100°C case temperature and a high repetitive avalanche capability. The operating junction temperature range is -40°C to +175°C, enhancing its ruggedness. The device is housed in a TO-247AC package, suitable for through-hole mounting.

Designed for demanding PDP applications, the IRFP4229PBF provides efficient and reliable switching performance. Its optimized parameters for PDP sustain, energy recovery, and pass switch functions, combined with a high operating junction temperature, make it a suitable choice for these specific applications.