| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9,170 pcs
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9170 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
5,400 pcs
|
5400 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The IRFP4227PBF from Infineon is an N-Channel MOSFET belonging to the Power MOSFET family. This component is designed for high-performance switching applications.
Key electrical specifications include a maximum breakdown voltage of 200V and a maximum on-state resistance (RDS(on)) of 25mΩ. It also offers a typical input capacitance of 4.6nF and a fast rise time of 20ns and fall time of 31ns. The device can handle a maximum continuous drain current and dissipate up to 330W of power.
This MOSFET operates within a temperature range of -40°C to 175°C. It is housed in a TO-247-3 package and utilizes a through-hole mounting type, making it suitable for various power electronic designs.
The IRFP4227PBF is manufactured by Infineon Technologies and is a reliable choice for engineers seeking robust power switching solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 200V.
The maximum on-state resistance is 25mΩ.
The maximum power dissipation is 330W.
The operating temperature range is -40°C to 175°C.
The IRFP4227PBF is in a TO-247-3 package.
It is mounted using the through-hole method.