| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,620 pcs
|
2620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP4110PBFXKMA1 is an N-channel MOSFET from Infineon Technologies designed for high-efficiency power switching applications. It features a maximum drain-to-source voltage of 100V and a continuous drain current of 180A at 25°C case temperature, with a maximum on-resistance of 4.5mΩ at Vgs=10V and Id=75A.
This device is suitable for synchronous rectification in switch-mode power supplies, uninterruptible power supplies, high-speed power switching, and hard-switched high-frequency circuits. It offers improved gate, avalanche, and dynamic dv/dt ruggedness, as well as fully characterized capacitance and avalanche safe operating area.
The MOSFET is offered in a TO-247AC through-hole package, supporting a junction temperature range of -55°C to 175°C. Maximum power dissipation is 370W at 25°C case temperature, with a linear derating factor of 2.5 W/°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.57 | $5.57 |
| 25+ | $3.21 | $3.21 |
| 50+ | $2.90 | $2.90 |
| 100+ | $2.65 | $2.65 |
| 500+ | $2.19 | $2.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
180A at 25°C case temperature, 130A at 100°C.
Maximum 4.5mΩ at Vgs=10V, Id=75A.
-55°C to 175°C junction temperature.
TO-247AC through-hole package.
Listed as RoHS3 compliant, but this is unverified.