Mfr Part #:

IRFP4110PBF

Mfr Name: Infineon

The Infineon IRFP4110PBF is an N-channel MOSFET designed for high-efficiency power switching applications. It features a 100V breakdown voltage and low on-resistance.

✓ Total Stock: 2,464 pcs

$ Price Range: $0.99

IRFP4110PBF Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	960 pcs On Request	960 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	504 pcs On Request	504 pcs	On Request	1	On Request	On Request	23+	On Request	On Request

IRFP4110PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Input Capacitance	9620pF
Mounting Type	Through Hole

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IRFP4110PBF Description

Short technical summary and product information.

The Infineon IRFP4110PBF is a high-performance N-channel Power MOSFET designed for demanding applications such as synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits.

Key electrical characteristics include a Drain-to-Source Breakdown Voltage of 100V and a low Static Drain-to-Source On-Resistance as low as 3.7mΩ at a gate-source voltage of 10V and drain current of 75A. The continuous drain current is rated up to 180A (silicon limited) at 25°C case temperature.

This MOSFET offers improved gate, avalanche, and dynamic dv/dt ruggedness, along with fully characterized capacitance and avalanche SOA. It is housed in a TO-247 package, suitable for through-hole mounting.

Applications benefit from its enhanced body diode dV/dt and dI/dt capability, making it suitable for hard-switched and high-frequency circuits.

IRFP4110PBF Quick Information

Product Type: N-channel MOSFET

Canonical Name: Infineon IRFP4110PBF N-channel MOSFET

Subcategory: N-Channel Power MOSFET

IRFP4110PBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IRFP4110PBF Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFP4110PBF Features

100V Drain-to-Source Breakdown Voltage
3.7mΩ Typical On-Resistance
180A Continuous Drain Current
TO-247 Package for Through-Hole Mounting
High-Efficiency Power Switching Applications

IRFP4110PBF Applications

Synchronous Rectification in SMPS
Uninterruptible Power Supply circuits
High Speed Power Switching
Hard Switched Circuits
High Frequency Circuits

IRFP4110PBF FAQs

6 frequently asked questions generated from this part’s specifications.

What is the breakdown voltage of the IRFP4110PBF?

The Drain-to-Source Breakdown Voltage is 100V.

What is the typical on-resistance of the IRFP4110PBF?

The typical Static Drain-to-Source On-Resistance is 3.7mΩ at VGS = 10V and ID = 75A.

What is the maximum continuous drain current for the IRFP4110PBF?

The maximum continuous drain current is 180A (silicon limited) at TC = 25°C.

What is the package type for the IRFP4110PBF?

The package type is TO-247.

What are the applications for the IRFP4110PBF?

Applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supply, high-speed power switching, and hard-switched and high-frequency circuits.

What is the operating temperature range for the IRFP4110PBF?

The operating junction and storage temperature range is -55°C to +175°C.