| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,400 pcs
|
1400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP4110PBF is an N-Channel enhancement mode power MOSFET from Infineon Technologies, designed for high efficiency power conversion. It utilizes advanced MOSFET technology to deliver low on-resistance and fast switching performance.
Key electrical specifications include a drain-to-source voltage (Vdss) of 100V, a continuous drain current of 120A (package limited) or 180A (silicon limited) at 25°C, and a maximum pulsed drain current of 670A. The typical drain-to-source on-resistance is 3.7 mOhm at Vgs = 10V, with a maximum of 4.5 mOhm. The device is rated for a maximum power dissipation of 370W at 25°C case temperature.
The MOSFET is housed in a through-hole TO-247-3 package (supplier device package TO-247AC), suitable for high-power applications. It has an operating junction temperature range of -55°C to 175°C. The part is lead-free (PbF) as indicated by the suffix.
The maximum drain-to-source voltage (Vdss) is 100 V.
The continuous drain current is 120 A (package limited) and 180 A (silicon limited) at Tc = 25°C.
The typical drain-to-source on-resistance is 3.7 mΩ at Vgs = 10V, Id = 75A.
The IRFP4110PBF uses a TO-247-3 through-hole package (supplier device package TO-247AC).
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant and is lead-free (PbF), though this compliance data is unverified.