| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
83 pcs
|
83 pcs | On Request | 1 | On Request | On Request | 1014 | On Request | On Request | |
|
14 pcs
|
14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
IRFP4004PBF is a 40V N-Channel power MOSFET manufactured by Infineon Technologies, utilizing HEXFET technology. This device is designed for high efficiency switching applications such as synchronous rectification in SMPS and high speed power switching.
The MOSFET features a maximum drain-to-source voltage of 40V and a continuous drain current of 195A (wire bond limited at 25°C) with a pulsed drain current capability of 1390A. The typical drain-to-source on-resistance is 1.35 mOhm at VGS=10V, enabling low conduction losses. The gate threshold voltage ranges from 2.0V to 4.0V, and the device can be driven with a 10V gate drive.
The part is rated for a maximum power dissipation of 380W and operates over a junction temperature range of -55°C to 175°C. It is packaged in a TO-247-3 through-hole package (TO-247AC) suitable for high-power applications requiring robust thermal management. The device is RoHS compliant and has a moisture sensitivity level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.43 | $5.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The IRFP4004PBF is offered in a TO-247-3 through-hole package, also known as TO-247AC.
The junction temperature range is -55°C to 175°C.
The device is marked as RoHS3 compliant, though this is unverified from the source.
Continuous drain current is 195A at 25°C (wire bond limited) and 350A (silicon limited).
Gate threshold voltage is 2.0V minimum and 4.0V maximum.
Typical on-resistance is 1.35 mOhm, maximum is 1.70 mOhm at VGS=10V.