| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IRFP3710PBF is a high-performance N-Channel MOSFET designed for power switching applications. It offers a robust 100V Drain-to-Source Voltage (Vdss) and can handle a continuous drain current of up to 57A at 25°C.
Key electrical characteristics include a maximum On-Resistance (Rds On) of 25 mOhm at 28A and 10V Vgs, and a gate threshold voltage (Vgs(th)) of 4V maximum at 250µA. The device also features a maximum gate charge (Qg) of 190nC at 10V and an input capacitance (Ciss) of 3000pF at 25V.
With a maximum power dissipation of 200W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for demanding environments. It is packaged in a TO-247AC through-hole package, facilitating easy mounting on PCBs.
This HEXFET® series component is ideal for various power management tasks where efficient switching and high current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V
TO-247AC through-hole
-55°C to 175°C
57A at case temperature
4V at 250µA drain current
25 milliohms maximum