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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFP3710 is a HEXFET Power MOSFET from Vishay Dale, utilizing advanced processing techniques for extremely low on-resistance per silicon area. This device is designed for efficiency and reliability in various applications.
Key electrical specifications include a Drain-to-Source Breakdown Voltage of 100V and a maximum Static Drain-to-Source On-Resistance of 0.025W at a gate-source voltage of 10V and drain current of 28A. The continuous drain current is rated at 57A at 25°C case temperature and 40A at 100°C case temperature. It also features a gate threshold voltage ranging from 2V to 4V.
This MOSFET operates within a junction temperature range of -55°C to +175°C and has a maximum power dissipation of 200W at 25°C case temperature. The TO-247 package is suitable for commercial-industrial applications requiring higher power levels.
Additional characteristics include fast switching speeds, a dynamic dv/dt rating, and it is fully avalanche rated. The TO-247 package offers an isolated mounting hole, making it a superior alternative to earlier TO-218 packages.
| Qty | Low | High |
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| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 57A at 25°C case temperature.
The Drain-to-Source Breakdown Voltage is 100V.
The maximum Static Drain-to-Source On-Resistance is 0.025W at VGS = 10V, ID = 28A.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFP3710 is supplied in a TO-247-3 package.