| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,395 pcs
|
4395 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP3703PBF is an N-Channel power MOSFET from Infineon Technologies designed for high-efficiency switching applications. It features a drain-source breakdown voltage of 30V and a continuous drain current rating of 210A at Tc=25°C, making it suitable for high-current circuits.
With a maximum on-resistance of only 2.8mΩ at Vgs=10V, this device minimizes conduction losses. It also offers a gate threshold voltage range of 2.0V to 4.0V and a maximum gate-source voltage of ±20V. Switching characteristics include typical turn-on delay of 18ns and rise time of 123ns.
The MOSFET is housed in a through-hole TO-247AC package (equivalent to TO-247-3) and operates over a junction temperature range of -55°C to 175°C. It is fully avalanche rated and supports applications such as synchronous rectification, active ORing, and high-power AC/DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.37 | $4.37 |
| 25+ | $2.49 | $2.49 |
| 100+ | $2.04 | $2.04 |
| 500+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V (minimum).
The continuous drain current is 210A at Tc=25°C and 100A at Tc=100°C.
The device is available in a TO-247-3 package (supplier package designation TO-247AC) with through-hole mounting.
The operating junction temperature range is -55°C to 175°C.
The maximum static drain-source on-resistance is 2.8mΩ at Vgs=10V, Id=76A.
The part is labeled as RoHS3 Compliant and lead-free, but this status is unverified.
The gate threshold voltage is 2.0V minimum and 4.0V maximum at Id=250µA.