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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay IRFP360 is a third-generation N-Channel Power MOSFET designed for commercial and industrial applications. It provides a robust combination of fast switching speeds, a rugged device design, and low on-resistance.
Key electrical specifications include a drain-source breakdown voltage of 400V and a typical on-resistance of 0.20 Ω at a gate-source voltage of 10V. The device features a continuous drain current rating of 23A at 25°C case temperature and 14A at 100°C. It also offers a total gate charge (Qg) of 210 nC maximum.
The MOSFET is housed in a TO-247 package, which is suitable for higher power levels compared to TO-220 devices. The TO-247 package features an isolated central mounting hole and provides greater creepage distance between pins, meeting most safety specifications.
This component is suitable for applications requiring high power switching and efficient operation. Its design considerations include dynamic dV/dt rating and repetitive avalanche rating, making it a reliable choice for demanding power electronics circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage for the IRFP360 is 400V.
The typical on-resistance of the IRFP360 at a gate-source voltage of 10V is 0.20 Ohms.
The continuous drain current for the IRFP360 at a case temperature of 25°C is 23A.
The IRFP360 is supplied in a TO-247 package.
The operating junction and storage temperature range for the IRFP360 is -55°C to +150°C.